Hydride gases, such as phosphine and arsine, are important contaminants in process chemicals used in both the petrochemical and semiconductor industries. For example, the presence of phosphine, arsine, hydrogen sulfide and carbonyl sulfide in polymer grade ethylene or propylene can have a deleterious effect on catalysts used in the production of polypropylene plastics. Accurate data on the concentrations of these contaminants at trace levels enables prediction of catalyst lifetime and minimizes production downtime.In the semiconductor industry, phosphine is used as a precursor for the deposition of group III-V compound semiconductors, and as a dopant in the manufacturing of semiconductor devices, such as diodes and transistors. In the case of group III-V compound materials, such as indium phosphide (InP), absence of other hydride dopant impurities e.g., silane, germane or hydrogen sulfide (and moisture) is critical, as they can have a profound effect on the performance of the final device. In particular, incorporated sulfur from hydrogen sulfide and carbonyl sulfide may affect the electrical properties of
Sub-ppb detection limits for hydride gascontaminants using GC-ICP-QQQ Introduction: Hydride gases, such as phosphine and arsine, are important contaminants in process chemicals usedin both the petrochemical and semiconductor industries. For example, the presence ofphosphine,arsine, hydrogen sulfide and carbonyl sulfide in polymer grade ethylene or propylene can have adeleterious effect on catalysts used in the production of polypropylene plastics. Accurate data onthe concentrations of these contaminants at trace levels enables prediction of catalyst lifetime andminimizes production downtime.In the semiconductor industry, phosphine is used as a precursor forthe deposition of group III-V compound semiconductors, and as a dopant in the manufacturing ofsemiconductor devices, such as diodes and transistors. In the case of group IlI-V compoundmaterials, such as indium phosphide (InP), absence of other hydride dopant impurities e.g., silane,germane or hydrogen sulfide (and moisture) is critical, as they can have a profound effect on theperformance of the final device. In particular, incorporated sulfur from hydrogen sulfide andcarbonyl sulfide may affect the electrical properties of the device, such as carrier concentration andelectron mobility. In the case of arsine, which is used in the manufacture of high electron mobilitytransistors (HEMTs) and field effect transistors (FETs), product performance can be adverselyaffected by the presence of germane. Agilent Technologies
还剩1页未读,是否继续阅读?
安捷伦科技(中国)有限公司为您提供《废气中GeH4含量检测方案(等离子体质谱)》,该方案主要用于废气中分子态无机污染物检测,参考标准--,《废气中GeH4含量检测方案(等离子体质谱)》用到的仪器有