原位电学透射样品杆
原位电学透射样品杆

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1600F 1600J 1600H

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美洲

  • 银牌
  • 第11年
  • 一般经销商
  • 营业执照已审核
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产地类别: 进口

美国Hummingbird是电镜业内最知名的原位透射应用厂家至今已有10年的原位透射研发经验,蜂鸟来源于著名的柏克林国家实验室,其专利的技术如液体样品杆,气氛反应样品杆,加热样品杆得到电镜工作者广泛的认可。


  



Board Contact (Type I)

This contact configuration has a conveniently removable reusable sample carrier onto which the chip is mounted.


Direct Chip Contact (Type II)

This contact configuration has a unique single chip that is directly inserted in the holder in a proprietary connector with up to 9 electrical contacts.


Spring Contact (Type III)

The spring contact configuration is a variation of the Type I connector that has fixed location spring contacts between the chip and the carrier.


Application Examples


?Correlating electrical properties of nanoscale material with microstructure ?Relating material defect populations to the electrical response Electromigration studies ?Operating microelectomechanical systems (MEMS)-based mechanical testing devices ?In-situ testing of solid-state energy devices


Options


?The 1600 Series Holder can be customized from a range of options. ?Custom designed sample carriers to fit any TEM sample geometry. ?Standard Bundled Shielded Wiring Option ?Low noise, individually shielded cabling option for pA range current measurements. ?Keithley 2400 SMU



Accessories


?Accessories available to maximize the versatility and ease of use of your Electrical Biasing Holder. ?Specialized Sample Substrate Chips ?Vacuum Tip Cover ?Custom Chip Carriers ?Keithley 2400 SMU


Nanoelectronics

Allowing researchers to perform in-situ TEM electrical measurements is a powerful tool for research into next generation of nano-scale electrical devices. Electrical signals can be applied or measured on individual nano-structures and devices, revealing relations between electrical behavior and microstructure.




Top: TEM images taken in-situ during the voltage scan in panel, at times I, II, III, and IV. Note the correlation of resistance with void size.

Bottom: Voltage scan on a single nanowires device (inset). The blue square in the inset shows the location of the TEM observation in panel B.

From Void Formation Induced Electrical Switching in Phase-Change Nanowires, Nano Letters 8, 4562, 2008. Image courtesy of Profs. Yi Cui, Stanford University and Andrew Minor, UC Berkeley.


Specification:


Items

1600 Series

Tilt Range

±45° depending on microscope and pole piece

Number of   Electrical Contacts

6, 8, or 9 *

Contact Type

Flexible wirebond   contacts or fixed spring contact

Chip Carrier

Mobile Chip Carrier

Carrier   Compatibility

Standard TEM Sample Supports

Carrier Size

Fits up to 3   x 6 mm samples

Wiring

Standard or Low-noise shielded

TEM Compatibility

FEI, JEOL, Hitachi, Zeiss


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