桌面型原子层沉积系统

桌面型原子层沉积系统

AT 系列ALD System 是一款小尺寸桌面型的原子层沉积系统，采用全新的设计理念、便捷的控制系统和丰富的成膜Recipes，为广大科研工作者提供了最优化的成膜系统。

OLED及钙钛矿LED发光器件性能评估技术

完善的OLED及钙钛矿LED发光器件性能评估技术，包含载流子特性分析系统，发光器件寿命测量系统，器件发光光谱特性分析系统，寿命分析系统及器件模拟和构建系统等；

用PEALD等离子增强原子层沉积系统制备Ge2Sb2Te5薄膜

利用等离子增强原子层沉积系统PEALD来沉积（Ge2Sb2Te5）GST薄膜，The application of plasma power was essential in obtaining a high growth rate and stoichiometric GST thin films. The chemical composition of the films was properly controlled by the cycling ratio and sequence of each precursor pulse. The stoichiometric films grown at 200°C showed a smooth surface morphology, highest density, and lowest impurity concentration.

用原子层沉积系统生长SrTiO3以提高其电学特性

用原子层沉积系统生长（SrTiO3）STO薄膜，在370°C，生长速率0.15 Å/ cycle. The adoption of a thin crystallized seed layer resulted in crystallized perovskite STO films at the as-deposited state without higher temperature post-annealing. A tox of 0.72 nm（dielectric constant of 108）and a low leakage current density（10−7A/cm2 at 0.8 V）were obtained from a planar capacitor structure consisting of Pt/20-nm-thick STO/Ru（bottom）.

用原子层沉积系统在硅片上沉积氧化铪HfO2和Al2O3，以及砷As参杂多晶硅研究

用原子层沉积系统在硅片上沉积氧化铪HfO2和Al2O3，以及砷As参杂多晶硅研究，Arsenic（As）-doped polycrystalline-silicon gate/HfO2 , HfO2–Al2O3, or Al2 O3–HfO2–Al2O3 / p-type Si（100） metal–oxide–semiconductor capacitors were fabricated using an atomic-layer-deposition technique to investigate the degree of As penetration and the electrical properties of various high-k gate dielectric stacks。