牛津仪器PlasmaPro100 ALE 原子层刻蚀-ALE-Flyer_2015-LR牛津仪器PlasmaPro100 ALE 原子层刻蚀-ALE-Flyer_2015-LR
简介:•Etch rates 2 to 7Å/cycle
•Demonstrated results in a-Si, Si, SiO2, MoS2 layer etching
•Fast recipe control down to 10ms
•ALD-style gas dose delivery using “ALD valves” with 10ms open-close简介:•Etch rates 2 to 7Å/cycle
•Demonstrated results in a-Si, Si, SiO2, MoS2 layer etching
•Fast recipe control down to 10ms
•ALD-style gas dose delivery using “ALD valves” with 10ms open-close response
•Ultra low power operation
•Ability to etch in ALE or normal etch mode
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