Ge Photodiodes - NIR Wavelengths

FDG03 - Ge Photodiode, 500 ns Rise Time, Ø3 mm Active Area
FDG05 - Ge Photodiode, 800 - 1800 nm, 220 ns Rise Time, 5 mm x 5 mm Active Area
FDG1010 - Ge Photodiode, 3500 ns Rise Time, 10 mm x 10 mm Active Area

Thorlabs stocks a wide selection of discrete photodiodes and calibrated photodiodes. These include Indium Gallium Arsenide (InGaAs), Gallium Phosphide (GaP), Silicon (Si), and Germanium (Ge) photodiodes, as well as Quadrant and Dual-Band photodiodes. The FGA20 provides high responsivity from 1200-2600 nm, allowing detection of wavelengths beyond the normal 1800 nm range of typical InGaAs photodiodes. In addition, we have a large variety of sockets available for all of our photodiodes.

Ge Photodiodes Feature:

Large Active Area: Ø5.00 mm
Ideal for Pulsed and CW Sources
Package Size: 0.275" x 0.310"
800 - 1800 nm Spectral Range
AR Coated for 1300 - 1550 nm