767 nm Laser Diode钾原子D2光谱激光管

767 nm Laser Diode钾原子D2光谱激光管

Technology

• DBR Single-Frequency Laser Chip

• AlGaAs QW Active Layer

• Epi designed for high reliability

 Features

• Available in several package styles

• Pulsed operation for spectral stability at short pulse lengths

• High power for CW applications

• High Slope Efficiency

Description

The PH767DBR Series of high-power edge-emitting lasers are based on Photodigm’s
advanced single-frequency laser technology. It provides a diffraction limited,
single lateral and longitudinal mode beam. Facets are passivated for high-power
reliability. 767 nm Laser Diodes used for K D2 line spectroscopy.

Absolute Maximum Rating

1/ Butterfly package 2/ TO8 package**Do not exceed drive current or operating power of supplied LIV

CW Characteristics at TC = 25°C unless otherwise specified

1/ Butterfly package  2/ TO-8 package

Handling Precautions

These devices are sensitive to ESD. When handling the module, grounded work area and
wrist strap must be used. Always store in an antistatic container with all leads shorted together.

How To Order

Part number example: PH767DBR040CM. Assign optical power from those shown below.  Use a
three-digit format for all power entries. Call factory for special performance selection and certification to certain atomic absorption lines. Butterfly package is offered only at 50% of output powers shown, and is not recommended for Spectroscopy applications. See Photodigm’s application note titled Optical
Feedback

Package Type

(CS) Chip on Submount

(CM) ‘C’ Mount

(T8) TO-8

(BF) Butterfly

Minimum Power (mW)

   020      040

         080