HORIBA UVISEL Plus研究级经典型椭偏仪

The feasibility of using the MM-16 SE in measuring thickness and refractive index of AlN thin and thick films has been demonstrated. Non destructive measurement of thickness was successfully applied to films as thick as 3μm deposited on Si. The multi-layer models with a surface layer with void and the simple dispersion gave useful information about surface roughness, film density and oxygen contamination.

The high accuracy characterisation of the thicknesses and optical properties of III-V semiconductors has been successfully performed using the UVISEL Spectroscopic Phase Modulated Ellipsometer. Moreover, Spectroscopic Ellipsometry can be applied to characterise multilayers of miscellaneous binary, ternary semiconductors and alloys (MQW structure, PIN structure, pump laser, laser semiconductor,…).

When compared with other optical metrology instruments the unique strengths of spectroscopic ellipsometers are based on their highly precise and simple experimental measurements plus physical and material information derived from optical constants characterization.

The UVISEL FUV combines high-speed acquisition, high accuracy and versatility with a straightforward recipe mode for automated tasks. This powerful combination allows the UVISEL spectroscopic ellipsometer to be used for monitoring the production of barrier coatings for packaging applications in real time.

Spectroscopic ellipsometry is an ideal technique to characterize film thicknesses and optical constants for photovoltaic applications. Spectroscopic ellipsometers are also sensitive to the presence of rough overlayer and graded optical constants. The technique provides the advantage to be fast, simple to operate and non-destructive for the characterization of the samples.

Phase Modulated Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of complete OLED stacks. The technique allows the determination of film thickness, optical properties and the effect of dopants to the active layers. For very high throughput applicatios where large area flat panels are to be charactrised in a production environment the Jobin Yvon FF-1000 ellipsometeer has a fully automated sample stage able to accept samples up to 1000 mm× 1000 mm. This accurate, automated thin film metrology tool delivrs both unique performance and proven reliability for on-line quality control of production processes. ?

The deposition method and conditions used for preparation of the ZrO films have resulted in generation of an inhomogeneous porous layer. Owing to the sensitivity of the UVISEL Spectroscopic Phase Modulated Ellipsometer and software it is possible to detect this layer, and to characterise its composition while at the same time measuring the film thicknesses and optical constants.

The sensitivity of Spectroscopic Ellipsometry is such that characterisation of different doping concentrations of Al in ZnO is possible. Further to this the UVISEL PMSE allows the highest sensitivity and precision of the ellipsometric angles across the full range [0°, 360°], even when ' is close to 0°, and this performance is essential when characterising thin transparent films

采用UVISEL相调制型椭圆偏振光谱仪对chalcogenide glass样品进行分析，研究其相应光学性质。

Spectroscopic Ellipsometry based on the liquid crystal devices is an excellent technique for the highly accurate characterization of organic semiconductor in OTFTs device in the visible range.

Owing to the sensitivity of the MM-16 Spectroscopic Ellipsometer and the advanced modeling features included in the DP2 software, this note describes the successful characterisation of complicated anti-reflective structures. Accurate and simultaneous determination of thickness and optical properties have been performed in the visible range. Similar analyses have been applied to other high-k material such as Ta2O5 / glass, Al2O3 / 3*{A2O3/a-Si} / GaAs, SiO2 / 2*{HfO2 / SiO2) / glass.

The sensitivity of Spectroscopic Ellipsometry is such that characterisation of different doping concentrations of Al in ZnO is possible. Further to this the UVISEL PMSE allows the highest sensitivity and precision of the ellipsometric angles across the full range [0°, 360°], even when ' is close to 0°, and this performance is essential when characterising thin transparent films

The deposition conditions have generated inhomogeneous porous layers that have been observed by the UVISEL Spectroscopic Phase Modulated Ellipsometer. Moreover, the spectroscopic measurements allow determination of the small discrepancies between the optical constants of a Y2O3 film grown at bare substrate and the one grown on a ZrO2 film.

The characterisation of TiO2 as a single layer and as an 8-layer dielectric stack was successfully carried out with the UVISEL Spectroscopic Phase Modulated Ellipsometer. Accurate and simultaneous determination of thickness and optical properties have been performed in the NIR/Visible range. Similar analyses have been applied to other high-k material such as Ta2O5 / glass, Al2O3 / 3*{A2O3/a-Si} / GaAs, SiO2 / 2*{HfO2 / SiO2) / glass.

Characterization of various chalcogenide glasses was performed successfully using the UVISEL NIR Spectroscopic Phase Modulated Ellipsometer. The UVISEL NIR ellipsometer allows the determination of film thickness and optical properties with very high accuracy even where the film is many microns thick, and deposited on a transparent substrate. The versatility of the UVISEL NIR in terms of instrument resolution, sensitivity and step size and the power of the instrument software make the UVISEL NIR the most suitable instrument for determination of these sample structures.

This application note illustrates the suitability of the UVISEL Spectroscopic Phase Modulated Ellipsometer as a very accurate instrument for studying solid/solid or solid/liquid interface reactions, and measurement of biofilm thickness.

Interpretation of this behaviour is not fully understood, but it is likely to be due to the ionic interaction between the DNA and the buffer solution. A natural negative charge on the DNA fragments means that in a neutral environment, such as water, their preferred orientation would be for the molecules to lay on the gold layer with no preferred orientation. When the buffer solution is added there is an interaction with the positive ions in the solution, and the DNA fragments stand up leading to an increase in layer thickness.

This interpretation has been supported by both surface tension measurement for the liquid phase and fluorescence spectroscopy for bulk behaviour. From this study there is clear evidence that increasing the substitution rate from 10% to 35% induces a reinforcement of the hydrophobic interactions and thus the formation of more compact and stable aggregates which can complex hydrophobic compounds. The use of CMP 35% C8 could be envisaged in drug formulations where dispersion of a hydrophobic drug in an aqueous phase is required.

The sample data is summarised in the figure. The thickness of the DNA sensor pad was found to be of the order of 20 ?. This is consistent with the preparation of a layer of single molecular thickness as expected. The pads characterised had a variety of shapes. The example chosen here had a ring shape. The area covered by the analysis is 50 mm x 20 mm.

采用UVISEL相调制型椭圆偏振光谱仪对DNA Sensor Pads样品进行分析,研究其膜层厚度和相应光学性质.

The UVISEL Spectroscopic Ellipsometer is a powerful instrument for characterizing complete EC devices with high accuracy and reliability, and provides information on surface roughness or interface layers along with their composition.

The aluminium anodised layer has been successfully characterised by the MM-16 Spectroscopic Ellipsometer with very high speed and accuracy.

Ellipsometry is a very versatile optical technique that has applications in many different fields, from the micro electronics and semiconductor industries (for characterizing oxides or photoresists on silicon wafers, for ex ample) to biology. This very sensitive measurement technique provides unequalled capabilities for thin film metrology, and has the advantage that it is non-destructive as it uses polarized light to probe the dielectr properties of a sample.

采用UVISEL相调制型椭圆偏振光谱仪可以对PDP结构样品进行分析,得到结构中各层的厚度、折射率的变化.

采用UVISEL相调制型椭圆偏振光谱仪对Porous silicon composite material 样品进行分析，研究其相应光学性质。

采用UVISEL相调制型椭圆偏振光谱仪对TiO2 Thin Films and Multilayer Antireflective Coatings样品进行分析,研究其膜层厚度和相应光学性质。

Spectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of complex ferroelectric stacks with high accuracy and precision. Specific modelling features in this study include the characterization of the anisotropic sapphire substrate, rough overlayer and layer inhomogeneity with depth.

Liquid Crystal Modulation Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of the compound semiconductor heterostructure AlGaN / GaN. Using the MM-16 spectroscopic ellipsometer it is a straightforward procedure to determine the film thickness and optical dispersions of the complete structure even where the film is several microns thick. The detailed knowledge of the optical parameters of AlGaN alloys is crucial for example for the design of opto-electronic devices. Furthermore, from the optical parameters a calibration curve could be constructed to provide a rapid and efficient determination of the Al content in the AlGaN layers. Thus Spectroscopic Ellipsometry also proves a non-destructive technique for AlGaN alloy composition determination. This method can be equally applied to other compound semiconductors such as SiGe, II-VI semiconductors or classical III-V semiconductors.

Optical characterization techniques proved to be complementary to optimize highmaterials used in microelectronic applications. This note shows that the VUV wavelength range of the UVISEL Phase Modulated Ellipsometer is particularly suitable for the accurate characterization of high-K film thickness and interfaces with nanoscale dimensions as well as optical properties and bandgap.

Spectroscopic ellipsometry is a powerful technique for high accuracy characterization of the thickness and optical constants of GeSbTe multilayer systems for rewritable optical disc applications. It was shown that measurement in the NIR range gives better accuracy for the analysis of these types of material. The use of the multiple sample analysis reduces parameter correlations and errors for the thinnest layers. Owing to the advanced modelling features included in the DeltaPsi2 software, it is a straightforward procedure to analyze such structures even with layers deposited on both sides of the substrate.

Spectroscopic ellipsometry is an excellent technique for the highly accurate characterization of TFT-LCD display panels based on a-Si and LTPS technologies. Owing to the sensitivity of the UVISEL spectroscopic ellipsometer and the advanced modeling features included in the DeltaPsi2 software it is possible to detect in a multistack different a-Si layers processed by various methods. Moreover the spectroscopic ellipsometry measurements allow determination of the grain size of p-Si films and illustrate the ability to characterize the crystallinity of silicon with high accuracy.

For multilayer structures it is always helpful and often necessary to know the properties of each film. Using the Jobin Yvon UVISEL NIR it is a straightforward procedure to investigate the thickness and optical properties of the complete PDP structure.