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This product contains full area coverage SnSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick SnSe2 sheet. Synthesized full area coverage monolayer SnSe2 is highly crystalline, some regions also display significant crystalline anisotropy.Sample Properties.Sample size1cm x 1cm square shapedSubstrate typeSapphire c-cut (0001) CoverageFull monolayer coverageElectrical properties 1.5 eV Indirect Gap SemiconductorCrystal structureHexagonal PhaseUnit cell parametersa = b = 0.380, c = 0.612 nm,α = β = 90°, γ = 120°Production method Low Pressure Chemical Vapor Deposition (LPCVD)Characterization methodsRaman, angle resolved Raman spectroscopy,photoluminescence, absorption spectroscopy TEM, EDSSpecifications 1) Identification. Full coverage 100% monolayer SnSe2 uniformly covered across c-cut sapphire2) Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.3) Smoothness. Atomically smooth surface with roughness 0.15 nm.4) Uniformity. Highly uniform surface morphology. SnSe2 monolayers uniformly cover across the sample. 5) Purity. 99.9995% purity as determined by nano-SIMS measurements6) Reliability. Repeatable Raman and photoluminescence response7) Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.8) Substrate. c-cut Sapphire but our research and development team can transfer SnSe2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.9) Defect profile. SnSe2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected SnSe2 using α-bombardment technique. Supporting datasets [for 100% Full area SnSe2 monolayers on c-cut Sapphire] Transmission electron images (TEM) acquired from CVD grown full area coverage SnSe2 monolayers on c-cut sapphire confirming high crystallinityEnergy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer SnSe2 on c-cut sapphire Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and shows the high crystallinity of the CVD samples. PL spectrum does not show any PL signal due to indirect band nature.

参数：表面电阻：小于600Ω/sq定制：＜300Ω/sq透明度： 95%Parameter:Sheet Resistance: 600Ω/sqCustom Order: 300Ω/sqTransparency: 95%

This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick ReSe2 sheet. Synthesized full area coverage monolayer ReSe2 is highly crystalline, some regions also display significant crystalline anisotropy. Sample Properties.Sample size1cm x 1cm square shapedSubstrate typeSapphire c-cut (0001)CoverageFull monolayer coverageElectrical properties1.45 eV Anisotropic Semiconductor (Indirect Bandgap)Crystal structure Distorted Tetragonal Phase (1T’)Unit cell parametersa = 0.656 nm, b = 0.672 nm, c = 0.674 nm,α = 91.74°, β = 105°, γ = 119°Production methodAtmospheric Pressure Chemical Vapor Deposition (APCVD)Characterization methodsRaman, angle resolved Raman spectroscopy,photoluminescence, absorption spectroscopy TEM, EDSSpecifications1) Identification. Full coverage 100% monolayer ReSe2 uniformly covered across c-cut sapphire 2) Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.3) Smoothness. Atomically smooth surface with roughness 0.15 nm.4) Uniformity. Highly uniform surface morphology. ReSe2 monolayers uniformly cover across the sample.5) Purity. 99.9995% purity as determined by nano-SIMS measurements6) Reliability. Repeatable Raman and photoluminescence response7) Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.8) Substrate. c-cut Sapphire but our research and development team can transfer ReSe2 monolayers onto variety of substrates including PET,quartz, and SiO2/Si without significant compromisation of material quality.Defect profile. ReSe2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected ReSe2 using α-bombardment technique.Supporting datasets [for 100% Full area ReSe2 monolayers on c-cut Sapphire] Transmission electron images (TEM) and angle resolved Raman spectroscopy measurements acquired from CVD grown full area coverage ReSe2 monolayers on c-cut sapphire confirming crystalline anisotropyEnergy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer ReSe2 on c-cut sapphireRaman spectroscopy measurement confirm monolayer nature of the CVD grown samples. Differential reflectance measurements clearly show band gap at 1.45 eV for monolayer ReS2 consistent with the existing literature values. PL spectrum does not show any PL signal due to indirect band nature.