National Research Council of Italy, Italy,
Filippo Giannazzo (PhD) joined CNR-IMM in 2006, he is Senior Researcher from 2010 and Research Director from 2020. He is expert in scanning probe microscopy methods for the characterization of carrier transport properties in advanced materials for micro- and nanoelectronics (wide-bandgap semiconductors, heterostructures, dielectrics, 2D materials). Author of 320 papers, 10 book chapters and 2 books (H-index=39, 4660 citations, source Scopus) and an international patent, he is frequently invited speaker in national and international conferences. He holds several national and international collaborations with academic institutions and industries. Involved in several national and EU projects, he is currently coordinating the FlagERA JTC-2019 project ETMOS.
第二届SPM纳米科学中国论坛 （NSSC 2020）
报告：Keynote talk: Conductive Atomic Force Microscopy of 2D Materials and Heterostructures for Nanoelectronics<br>主题报告：导电原子力显微镜及纳米电子学二维材料和异质结构研究
My presentation will provide an overview of conductive atomic force microscopy (C-AFM) applications to 2D materials for next generation micro- and nano- electronic devices, by discussing a number of relevant case studies:
(i) the lateral homogeneity of current transport in graphene grown by CVD or by thermal decomposition of SiC;
(ii) the Schottky barrier homogeneity of MoS2;
(iii) the vertical current injection through 2D/3D or 2D/2D materials heterojunctions
The results of the nanoscale electrical characterization will be correlated to device level measurements, thus providing an insight in the phenomena limiting the performances of 2D materials-based devices.