看了光学仪器组件的用户又看了
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UV/blue sensitive photodiodes
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|||||
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Type No.
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Active area
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Dark current
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Rise time
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||
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Chip
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Package
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Size
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Area
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5V
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410nm 5V 50Ω
|
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mm
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mm2
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nA
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ns
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||
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PS1-2
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TO52
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1.0x1.0
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1
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0.01
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50
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PS1-2
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LCC6.1
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1.0x1.0
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1
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0.01
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50
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PC5-2
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TO5
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Ø 2.52
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5
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0.3
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150
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PS7-2
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TO5
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2.66x2.66
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7
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0.4
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200
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PC10-2
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TO5
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Ø 3.57
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10
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1
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300
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PS13-2
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TO5
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3.5x3.5
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13
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1
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300
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PS33-2
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TO8
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5.7x5.7
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33
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2
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600
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PC50-2
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BNC
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Ø 7.98
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50
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5
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1000
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PS100-2
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BNC
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10x10
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100
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10
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2000
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PS100-2
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CERpin
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10x10
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100
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10
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2000
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Band pass filter modules: PC10-2 TO5i with center wavelength 254nm or 300nm or 350nm
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Blue/green sensitive photodiodes
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|||||
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Type No.
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Active area
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Dark current
|
Rise time
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||
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Chip
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Package
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Size
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Area
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5V
|
410nm 5V 50Ω
|
|
mm
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mm2
|
nA
|
ns
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||
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PC1-6b
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TO52S3
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Ø 1.13
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1
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0.05
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10
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PC5-6b
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TO5
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Ø 2.52
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5
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0.1
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20
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PS7-6b
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TO5
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2.7x2.7
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7
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0.15
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25
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PC10-6b
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TO5
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Ø 3.57
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10
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0.2
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45
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PS13-6b
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TO5
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3.5x3.5
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13
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0.25
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50
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PS33-6b
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TO8
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5.7x5.7
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33
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0.6
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140
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PS100-6b
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CERpin
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10x10
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100
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1
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200
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PS100-6b
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LCC10S
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10x10
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100
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1
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200
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Band pass filter modules: PR20-6b TO5i with center wavelength 488nm or 550nm or 633nm or 680nm
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|||||
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High speed photodiodes (for fast rise times at low reverse voltages)
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|||||
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Type No.
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Active area
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Dark current
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Rise time
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||
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Chip
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Package
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Size
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Area
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20V
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850nm 20V 50Ω
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mm
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mm2
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nA
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ns
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||
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PS0.25-5
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LCC6.1
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0.5x0.5
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0.25
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0.1
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0.4
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PS0.25-5
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TO52S3
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0.5x0.5
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0.25
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0.1
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0.4
|
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PC0.55-5
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TO52S1
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Ø 0.84
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0.55
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0.2
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1
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|
PC0.55-5
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LCC6.1
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Ø 0.84
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0.55
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0.2
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1
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PS1-5
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LCC6.1
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1.0x1.0
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1
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0.2
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1.5
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PS1-5
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TO52S3
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1.0x1.0
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1
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0.2
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1.5
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PS7-5
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TO5
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2.7x2.7
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7
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0.5
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2
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PS11.9-5
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TO5
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3.45x3.45
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11.9
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1
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3
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PC20-5
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TO8
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Ø 5.05
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20
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2
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3.5
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PS33-5
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TO8
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5.7x5.7
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33
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2
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3.5
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PS100-5
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CERpinS
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10x10
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100
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2
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5
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PS100-5
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LCC10S
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10x10
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100
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2
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5
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High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)
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|||||
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Type No.
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Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
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Size
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Area
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20V
|
850nm 20V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
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PS0.25-5t
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LCC6.1
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0.5x0.5
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0.25
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1
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0.4
|
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PC0.55-5t
|
LCC6.1
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Ø 0.84
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0.55
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5
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1
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PC0.55-5t
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T1 3/4
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Ø 0.84
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0.55
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5
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1
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PC0.55-5t
|
T1 3/4 black
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Ø 0.84
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0.55
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5
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1
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PS1-5t
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LCC6.1
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1.0x1.0
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1
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1
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1
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IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection)
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|||||
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Type No.
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Active area
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Dark current
|
Rise time
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||
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Chip
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Package
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Size
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Area
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10V
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850nm 10V 50Ω
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|
mm
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mm2
|
nA
|
ns
|
||
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PC1-6
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TO52S1
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Ø 1.13
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1
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0.05
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10
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PC1-6
|
TO52S3
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Ø 1.13
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1
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0.05
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10
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PC5-6
|
TO5
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Ø 2.52
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5
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0.1
|
13
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PS7-6
|
TO5
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2.66×2.66
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7
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0.1
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15
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PC10-6
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TO5
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Ø 3.57
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10
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0.2
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20
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PS13-6
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TO5
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3.5×3.5
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13
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0.2
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20
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PC20-6
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TO8
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Ø 5.05
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20
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0.3
|
25
|
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PC50-6
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TO8S
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Ø 7.98
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50
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0.5
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30
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PS100-6
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BNC
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10×10
|
100
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0.8
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50
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PS100-6
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CERpinS
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10×10
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100
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0.8
|
50
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PS100-6
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LCC10S
|
10×10
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100
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0.8
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50
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IR photodiodes with fully depletable (very low capacitance levels)
|
|||||
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Type No.
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Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
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10V
|
905nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
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PC5-7
|
TO8i
|
Ø 2.52
|
5
|
0.05
|
45
|
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PC10-7
|
TO8i
|
Ø 3.57
|
10
|
0.1
|
50
|
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PC20-7
|
TO8Si
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Ø 5.05
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20
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0.2
|
50
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PS100-7
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LCC10
|
10×10
|
100
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1.5
|
50
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QP100-7
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LCC10
|
10×10
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4×25
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0.5
|
50
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Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources)
|
|||||
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Type No.
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Active area
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Dark current
|
Rise time
|
||
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Chip
|
Package
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Size
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Area
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150V
|
1064nm 150V 50Ω
|
|
mm
|
mm2
|
nA
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ns
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||
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QP22-Q
|
TO8S
|
Ø 5.3
|
4×5.7
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1.5
|
5
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QP45-Q
|
TO8S
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6.7×6.7
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4×10.96
|
3
|
5
|
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QP154-Q
|
TO1032i
|
Ø 14.0
|
4×38.5
|
10
|
6
|
|
PIN Series
|
Optimized for
|
Special features
|
Application
|
|
Series-2
|
200-500 nm
|
UV / Blue enhanced
|
Analytical instruments, readout for scintillators
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|
Series-6b
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400-650 nm
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Blue / Green enhanced
|
Photometric illuminometer
|
|
Series-5b
|
360-550 nm
|
High-speed Epitaxy, blue / green enhanced
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Optical fiber communication, high speed photometry
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|
Series-5t
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400-850 nm
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High-speed Epitaxy, low voltage (3.5V)
|
|
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Series-5
|
450-950 nm
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High-speed Epitaxy
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|
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Series-6
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700-950 nm
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General purpose, low dark current, fast response
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Precision photometry, analytical instruments
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Series-7
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700-1100 nm
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Low capacity, full depletable
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High energy physics
|
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Series-Q
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900-1100 nm
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Enhanced NIR sensitivity, low voltage, full depletable
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YAG laser detection
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Series-i
|
600-1700 nm
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InGaAs photodiodes, high IR sensitivity, low dark current
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Eye-sate laser detection
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Series-X
|
Ionizing radiation
|
With or without scintillator, ultra
|
Medical, security, material
|
| 用户单位 | 采购时间 |
|---|---|
| 嘉兴凯实生物科技有限公司 | 2012-02-20 |
新势力光电(www.NewOpto.com)专业供应光电二极管,光电探测器,光电管,探测器.垂询热线:0571-85152711.
光学仪器组件NewOpto的工作原理介绍
光学仪器组件NewOpto的使用方法?
NewOpto多少钱一台?
光学仪器组件NewOpto可以检测什么？
光学仪器组件NewOpto使用的注意事项？
NewOpto的说明书有吗？
光学仪器组件NewOpto的操作规程有吗？
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